The Photo-absorption Coefficient Measurement of EUV Resist
نویسندگان
چکیده
منابع مشابه
Report on EUV resist and process limitations
EUV lithography (λ=13.4nm) has been identified as one of the technologies likely to succeed to 193nm lithography for the definition of ever-smaller transistor architectures. Whether EUV in the end will outrank competing technologies for the 32nm and 22nm nodes (Hyper NA immersion, maskless, nanoimprint) and whether EUV will make it to mass production of integrated circuits will depend on both E...
متن کاملRecent Progress of EUV Resist Technology in EIDEC
EUV lithography is one of the promising technologies for manufacturing devices at 16 nm half-pitch node and below. EUV resists are required to improve the resolution, line width roughness (LWR), and sensitivity. However it is generally thought that the lithographic performance is determined by the trade-off relationship among these factors. Moreover, resist outgassing is another issue with EUV ...
متن کاملModeling of EUV photoresists with a resist point spread function
Extreme ultraviolet (EUV) lithography is under development for possible deployment at the 32-nm technology node. One active area of research in this field is the development of photoresists that can meet the stringent requirements (high resolution, high sensitivity, low LER, etc.) of lithography in this regime. In order to facilitate research in this and other areas related to EUV lithography, ...
متن کاملmeasurement the absorption capacity of solar energy storage technology
Although solar energy is one of the most important renewable energies in Iran that most areas of the country, especially the Central Desert, have considerable ability to use, but the random nature of this type of energy makes it difficult to predict its output power and may cause problems in the performance of the feed systems. For this reason, the use of energy storage systems for periods of l...
متن کاملQuantum modeling of light absorption in graphene based photo-transistors
Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 2009
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.22.85